Title

The Effects Of Space-Charge-Layer Thickness Modulation On Diffusion Capacitance

Authors

Authors

J. J. Liou;A. Ortizconde

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.

Keywords

Semiconductor Devices And Device Physics; P/N Junctions; Bipolar Devices; Physics, Applied

Abstract

The effect of junction space-charge-layer thickness modulation is normally omitted in the conventional diffusion capacitance model. This note calculates the diffusion capacitance including such an effect and investigates the errors introduced by the conventional model under a wide range of bias conditions, as well as for different doping concentrations, different layer thicknesses, and different temperatures.

Journal Title

Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

Volume

33

Issue/Number

11

Publication Date

1-1-1994

Document Type

Note

DOI Link

http://dx.doi.org/10.1143/jjap.33.6148

Language

English

First Page

6148

Last Page

6149

WOS Identifier

WOS:A1994QB82700014

ISSN

0021-4922

Recommended Citation

"The Effects Of Space-Charge-Layer Thickness Modulation On Diffusion Capacitance" (1994). Faculty Bibliography 1990s. 746.
https://stars.library.ucf.edu/facultybib1990/746