Modeling Of Gaas-Mesfet Output Conductance And Transconductance Frequency Dispersion
Abbreviated Journal Title
Int. J. Electron.
ANOMALIES; Engineering, Electrical & Electronic
The output conductance and transconductance frequency dispersion phenomena of a GaAs MESFET have been modelled. A non-uniform temperature distribution between the substrate and surface channel is accounted for. Experimental data are used to justify the accuracy of the present model. Good agreement between the model prediction and measurement has been obtained. The output conductance and transconductance frequency dispersion has a significant impact in determining the small-signal voltage gain of a MESFET amplifier.
International Journal of Electronics
"Modeling Of Gaas-Mesfet Output Conductance And Transconductance Frequency Dispersion" (1993). Faculty Bibliography 1990s. 960.