Title

Avalanche Breakdown Effects On Algaas/Gaas Hbt Performance

Authors

Authors

J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Int. J. Electron.

Keywords

COLLECTOR BASE JUNCTION; BIPOLAR-TRANSISTORS; MULTIPLICATION; MODEL; Engineering, Electrical & Electronic

Abstract

The performance of heterojunction bipolar transistors operating in the avalanche breakdown regime has been evaluated. The analysis shows that AlGaAs/GaAs HBT under avalanche breakdown has higher collector-base junction capacitance, lower Early voltage, higher device noise, lower power efficiency, lower cut-off frequency, reduced device switching speed, and degraded maximum frequency of oscillation.

Journal Title

International Journal of Electronics

Volume

74

Issue/Number

6

Publication Date

1-1-1993

Document Type

Article

DOI Link

http://dx.doi.org/10.1080/00207219308925892

Language

English

First Page

909

Last Page

916

WOS Identifier

WOS:A1993LG94600009

ISSN

0020-7217

Recommended Citation

"Avalanche Breakdown Effects On Algaas/Gaas Hbt Performance" (1993). Faculty Bibliography 1990s. 963.
https://stars.library.ucf.edu/facultybib1990/963