Controlled fabrication of single electron transistors from single-walled carbon nanotubes
Abbreviated Journal Title
Appl. Phys. Lett.
QUANTUM DOTS; TRANSPORT; NANOWIRES; Physics, Applied
Single electron transistors (SETs) are fabricated by placing single-walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al(2)O(3) bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 12-15 meV with level spacing of similar to 5 meV were measured from the Coulomb diamond, in agreement with a dot size of similar to 100 nm, implying that the local gate defines the dot size by bending SWNT at the edges and controls its operation. This "mechanical template" approach may facilitate large scale fabrication of SET devices using SWNT. (C) 2008 American Institute of Physics.
Applied Physics Letters
"Controlled fabrication of single electron transistors from single-walled carbon nanotubes" (2008). Faculty Bibliography 2000s. 1016.