Title

Controlled fabrication of single electron transistors from single-walled carbon nanotubes

Authors

Authors

P. Stokes;S. I. Khondaker

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

QUANTUM DOTS; TRANSPORT; NANOWIRES; Physics, Applied

Abstract

Single electron transistors (SETs) are fabricated by placing single-walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al(2)O(3) bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 12-15 meV with level spacing of similar to 5 meV were measured from the Coulomb diamond, in agreement with a dot size of similar to 100 nm, implying that the local gate defines the dot size by bending SWNT at the edges and controls its operation. This "mechanical template" approach may facilitate large scale fabrication of SET devices using SWNT. (C) 2008 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

92

Issue/Number

26

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000257424500038

ISSN

0003-6951

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