Title

Classical size effect in oxide-encapsulated Cu thin films: Impact of grain boundaries versus surfaces on resistivity

Authors

Authors

T. Sun; B. Yao; A. P. Warren; V. Kumar; S. Roberts; K. Barmak;K. R. Coffey

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Vac. Sci. Technol. A

Keywords

CONDUCTIVITY; COPPER; Materials Science, Coatings & Films; Physics, Applied

Abstract

A methodology is developed to independently evaluate surface and grain boundary scattering in silicon dioxide-encapsulated, polycrystalline Cu thin films. The room-temperature film resistivity for samples with film thicknesses in the range of 27 to 1 65 nm and different grain sizes (determined from approximately 400 to 1500 grains per sample) is compared to existing and empirical models of surface and grain boundary scattering. For the combined effects of surface and grain boundary scattering, the surface specularity parameter p is 0.6 +/- 0.2 and the grain boundary reflectivity coefficient R is 0.45 +/- 0.03. It is thereby shown that the resistivity contribution from grain boundary scattering is significantly greater than that of surface scattering for Cu thin films having Cu/SiO2 surfaces and grain sizes similar to film thickness. (C) 2008 American Vacuum Society.

Journal Title

Journal of Vacuum Science & Technology A

Volume

26

Issue/Number

4

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

605

Last Page

609

WOS Identifier

WOS:000257424200008

ISSN

0734-2101

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