Title

Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires

Authors

Authors

H. T. Wang; Z. P. Xie; W. Y. Yang; J. Y. Fang;L. N. An

Comments

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Abbreviated Journal Title

Cryst. Growth Des.

Keywords

SILICON-CARBIDE NANOWIRES; INDIUM-PHOSPHIDE NANOWIRES; FIELD-EMISSION; PROPERTIES; BUILDING-BLOCKS; NANORODS; SEMICONDUCTOR; CRYSTALS; NANOSTRUCTURES; DIAMETER; ARRAYS; Chemistry, Multidisciplinary; Crystallography; Materials Science, ; Multidisciplinary

Abstract

In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.

Journal Title

Crystal Growth & Design

Volume

8

Issue/Number

11

Publication Date

1-1-2008

Document Type

Article

DOI Link

http://dx.doi.org/10.1021/cg8002756

Language

English

First Page

3893

Last Page

3896

WOS Identifier

WOS:000260675500005

ISSN

1528-7483

Recommended Citation

"Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires" (2008). Faculty Bibliography 2000s. 1107.
https://stars.library.ucf.edu/facultybib2000/1107