Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires
Abbreviated Journal Title
Cryst. Growth Des.
SILICON-CARBIDE NANOWIRES; INDIUM-PHOSPHIDE NANOWIRES; FIELD-EMISSION; PROPERTIES; BUILDING-BLOCKS; NANORODS; SEMICONDUCTOR; CRYSTALS; NANOSTRUCTURES; DIAMETER; ARRAYS; Chemistry, Multidisciplinary; Crystallography; Materials Science, ; Multidisciplinary
In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.
Crystal Growth & Design
"Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires" (2008). Faculty Bibliography 2000s. 1107.