Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy
Abbreviated Journal Title
J. Cryst. Growth
doping; HRTEM; XPS; XRD; thin films; CeO2; sapphire; SAMARIA-DOPED CERIA; SOLID OXIDE FUEL; ELECTRICAL-PROPERTIES; THIN-FILMS; HIGH-TEMPERATURE; CEO2 CERAMICS; CONDUCTIVITY; ELECTROLYTES; GD; BEHAVIOR; Crystallography; Materials Science, Multidisciplinary; Physics, Applied
We used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce0.8Sm0.2O1.9 films on single-crystal c-Al2O3. Films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The film/substrate epitaxial relationship can be written as CeO2(1 1 1)//alpha-Al2O3(0 0 0 1) and CeO2[1 1 0]//alpha-Al2O3 [(2) over bar 1 1 0]. Ce and Sm were found to be in their highest oxidation state, +4 and +3, respectively. The doped cubic CeO2 films have a preferred (1 1 1) orientation. Significant conductivity difference was observed between single and polycrystalline films. A good orientation existing in the single-crystalline thin films may help long-range oxygen vacancy transport, ultimately contributing to significantly higher conductivities, in comparison to polycrystalline films. Published by Elsevier B.V.
Journal of Crystal Growth
"Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy" (2008). Faculty Bibliography 2000s. 1185.