Evaluation of hot-electron effect on LDMOS device and circuit performances
Abbreviated Journal Title
IEEE Trans. Electron Devices
DC-DC converter; gate charge; hot-electron; Laterally double-diffused; MOS (LDMOS); on-resistance; reliability; switching performance; TRANSISTORS; DEGRADATION; VOLTAGE; Engineering, Electrical & Electronic; Physics, Applied
Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been studied experimentally. The measured threshold voltage, on-resistance, and gate capacitance of LDMOS transistors all increase after stress. The transistor model simulation is compared with the experimental data. Good agreement between the model predictions and measurement results is obtained. The gate charging time of the LDMOS and a full-bridge dc-dc converter are simulated in Cadence SpectreRF. The simulation results indicate that the gate charge of the LDMOS increases and that the power efficiency of the full-bridge dc-dc converter decreases after hot-electron stress.
Ieee Transactions on Electron Devices
"Evaluation of hot-electron effect on LDMOS device and circuit performances" (2008). Faculty Bibliography 2000s. 1187.