Title

Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency

Authors

Authors

J. S. Yuan;J. Ma

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

breakdown (BD); class-E power amplifier (PA); MOS devices; power; efficiency; RF stress; GATE-OXIDE BREAKDOWN; SOFT BREAKDOWN; PERFORMANCE; MODEL; Engineering, Electrical & Electronic; Physics, Applied

Abstract

RF-stress effects on MOS power-amplifier performance are studied. The class-E power-amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The power efficiency degrades with gate-oxide RF stress due to increased gate leakage current and reduced output voltage. The degradation is enhanced when the BD location is closer to the drain side than the source side.

Journal Title

Ieee Transactions on Electron Devices

Volume

55

Issue/Number

1

Publication Date

1-1-2008

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/ted.2007.911092

Language

English

First Page

430

Last Page

434

WOS Identifier

WOS:000252059000045

ISSN

0018-9383

Recommended Citation

"Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency" (2008). Faculty Bibliography 2000s. 1188.
https://stars.library.ucf.edu/facultybib2000/1188