Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency
Abbreviated Journal Title
IEEE Trans. Electron Devices
breakdown (BD); class-E power amplifier (PA); MOS devices; power; efficiency; RF stress; GATE-OXIDE BREAKDOWN; SOFT BREAKDOWN; PERFORMANCE; MODEL; Engineering, Electrical & Electronic; Physics, Applied
RF-stress effects on MOS power-amplifier performance are studied. The class-E power-amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The power efficiency degrades with gate-oxide RF stress due to increased gate leakage current and reduced output voltage. The degradation is enhanced when the BD location is closer to the drain side than the source side.
Ieee Transactions on Electron Devices
"Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency" (2008). Faculty Bibliography 2000s. 1188.