CMOS RF design for reliability using adaptive gate-source biasing
Abbreviated Journal Title
IEEE Trans. Electron Devices
adaptive biasing; channel hot electron (CHE); gate oxide breakdown; negative-bias temperature instability (NBTI); power amplifier; power-added efficiency; radio frequency (RF); third-order intercept; point; HOT-CARRIER STRESS; OXIDE BREAKDOWN; SOFT-BREAKDOWN; DEGRADATION; PERFORMANCE; MOSFET; MODEL; ELECTRON; TECHNOLOGY; AMPLIFIERS; Engineering, Electrical & Electronic; Physics, Applied
An adaptive gate-source biasing scheme to improve the MOSFET RF circuit reliability is presented. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in the drain current subjected to various device reliability mechanisms. The MOS dc circuit using the adaptive technique is less sensitive to a threshold voltage and mobility degradations from a long-term stress effect. A class-AB RF power amplifier example shows that the use of a source resistance makes the power-added efficiency robust against the threshold voltage and mobility variations, whereas the use of a source inductance is more reliable for the input third-order intercept point.
Ieee Transactions on Electron Devices
"CMOS RF design for reliability using adaptive gate-source biasing" (2008). Faculty Bibliography 2000s. 1189.