Title

HfO2 Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation

Authors

Authors

J. S. Yuan;C. Z. Yu

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Breakdown (BD) location; channel hot electron; gate oxide breakdown; high-k transistors; intermodulation distortion (IMD); radio frequency; (RF); third-order intercept point.; CMOS; PERFORMANCE; LINEARITY; DEGRADATION; BEHAVIOR; SUBJECT; DEVICE; IMPACT; LAYER; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO2 MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained.

Journal Title

Ieee Transactions on Electron Devices

Volume

55

Issue/Number

10

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

2790

Last Page

2794

WOS Identifier

WOS:000260252700032

ISSN

0018-9383

Share

COinS