HfO2 Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation
Abbreviated Journal Title
IEEE Trans. Electron Devices
Breakdown (BD) location; channel hot electron; gate oxide breakdown; high-k transistors; intermodulation distortion (IMD); radio frequency; (RF); third-order intercept point.; CMOS; PERFORMANCE; LINEARITY; DEGRADATION; BEHAVIOR; SUBJECT; DEVICE; IMPACT; LAYER; Engineering, Electrical & Electronic; Physics, Applied
The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO2 MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained.
Ieee Transactions on Electron Devices
"HfO2 Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation" (2008). Faculty Bibliography 2000s. 1190.