Laser doping of chromium as a double acceptor in silicon carbide with reduced crystalline damage and nearly all dopants in activated state
Abbreviated Journal Title
silicon carbide; laser doping; chromium; DLTS; hall effect measurements; DEEP; IMPURITIES; SEMICONDUCTORS; Materials Science, Multidisciplinary; Metallurgy & Metallurgical; Engineering
Chromium, a p-type dopant, has been incorporated into silicon carbide by laser doping. Secondary ion mass spectrometric data revealed enhanced solid solubility (2.29 x 10(19) cm(-3) in 6H-SiC and 1.42 x 19(19) cm(-3) in 4H-SiC), exceeding the equilibrium limit (3 x 10(17) cm(-3) in 6H-SiC above 2500 degrees C). The roughness, surface chemistry and crystalline integrity of the doped sample were examined by optical interferometry, energy dispersive X-ray spectrometry and transmission electron microscopy, respectively, and showed no crystalline disorder due to laser heating. Deep-level transient spectroscopy confirmed Cr as a deep-level acceptor with activation energies E(v) + 0.80 eV in 4H-SiC and E(v) + 0.45eV in 6H-SiC. The Hall effect measurements showed that the hole concentration (1.942 x 10(19) cm(-3)) is almost twice the average Cr concentration (1 x 10(19) cm(-3)), confirming that almost all of the Cr atoms were completely activated to the double acceptor state by the laser-doping process without requiring any additional annealing step. Published by Elsevier Ltd on behalf of Acta Materialia Inc.
"Laser doping of chromium as a double acceptor in silicon carbide with reduced crystalline damage and nearly all dopants in activated state" (2008). Faculty Bibliography 2000s. 125.