Title

Photothermal effect in narrow band gap PbTe semiconductor

Authors

Authors

Z. Dashevsky; V. Kasiyan; S. Asmontas; J. Gradauskas; E. Shirmulis; E. Flitsiyan;L. Chernyak

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

CARRIER; Physics, Applied

Abstract

In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO(2) laser with photon energy less than PbTe forbidden gap. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243081]

Journal Title

Journal of Applied Physics

Volume

106

Issue/Number

7

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000270915600147

ISSN

0021-8979

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