Photothermal effect in narrow band gap PbTe semiconductor
Abbreviated Journal Title
J. Appl. Phys.
CARRIER; Physics, Applied
In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO(2) laser with photon energy less than PbTe forbidden gap. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243081]
Journal of Applied Physics
"Photothermal effect in narrow band gap PbTe semiconductor" (2009). Faculty Bibliography 2000s. 1455.