Abbreviated Journal Title
J. Appl. Phys.
Keywords
Carrier; Physics; Applied
Abstract
In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO(2) laser with photon energy less than PbTe forbidden gap.
Journal Title
Journal of Applied Physics
Volume
106
Issue/Number
7
Publication Date
1-1-2009
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0021-8979
Recommended Citation
Dashevsky, Z.; Kasiyan, V.; Asmontas, S.; Gradauskas, J.; Shirmulis, E.; Flitsiyan, E.; and Chernyak, L., "Photothermal effect in narrow band gap PbTe semiconductor" (2009). Faculty Bibliography 2000s. 1455.
https://stars.library.ucf.edu/facultybib2000/1455
COinS
Comments
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