Preparation and characterization of CuIn1-xGaxSe2-ySy thin film solar cells by rapid thermal processing
This paper describes the synthesis and characterization of CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on similar to 2 mu m thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 x 10(15) cm(-3). (C) 2008 Elsevier B.V. All rights reserved.
Thin Solid Films
"Preparation and characterization of CuIn1-xGaxSe2-ySy thin film solar cells by rapid thermal processing" (2009). Faculty Bibliography 2000s. 1754.