Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
Recombination; Epitaxy; Devices; Physic; Applied
Abstract
Variable temperature light-induced transient grating technique combined with electron beam-induced current measurements in situ in a scanning electron microscope were employed for carrier transport studies in quasibulk hydride-vapor phase epitaxy grown undoped GaN layers. Diffusion length of carriers independently determined from both techniques was found to increase with temperature in the range from 70 to 400 K. This increase was attributed to the temperature-induced growth of carrier lifetime, as was confirmed by light-induced transient grating measurements below 300 K and by cathodoluminescence above room temperature.
Journal Title
Applied Physics Letters
Volume
95
Issue/Number
9
Publication Date
1-1-2009
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lin, Y.; Flitsyian, E.; Chernyak, L.; Malinauskas, T.; Aleksiejunas, R.; Jarasiunas, K.; Lim, W.; Pearton, S. J.; and Gartsman, K., "Optical and electron beam studies of carrier transport in quasibulk GaN" (2009). Faculty Bibliography 2000s. 1804.
https://stars.library.ucf.edu/facultybib2000/1804
Comments
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