Stress-mediated redistribution of Mn in annealed Si:Mn
Abbreviated Journal Title
Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.
Silicon; Manganese; Ion implantation; Annealing; Solid phase epitaxy; Magnetic semiconductor; MAGNETIC-PROPERTIES; SILICON; PRESSURE; Materials Science, Multidisciplinary; Physics, Condensed Matter
Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn+ (Si:Mn, Mn-55(+) doses, D = 2 x 10(15) or 1.2 x 10(16) cm(-2), energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT), also under hydrostatic Ar pressure up to 1.1 GPa (HP), have been investigated by SIMS, X-ray and related methods. As-implanted Si:Mn indicates magnetic ordering. SPER depends on Mn+ dosage, HT, HP all on processing time. Processing at 870-1000 K results in a minimum in the Mn concentration at similar to 0.15 mu m depth. At 1170 K and above. the diffusion of Mn to the Surface increases with HP. Our results help ill understanding the mechanisms of SPER and of origin of magnetic ordering in Mn:Si. (C) 2008 Elsevier B.V. All rights reserved.
Materials Science and Engineering B-Advanced Functional Solid-State Materials
Article; Proceedings Paper
"Stress-mediated redistribution of Mn in annealed Si:Mn" (2009). Faculty Bibliography 2000s. 1913.