Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction
Abbreviated Journal Title
EFFECTIVE CHANNEL-LENGTH; SERIES-RESISTANCE; THRESHOLD VOLTAGE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the I(D)(V(GS), V(DS)) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct fitting to the drain current and indirect fitting to the measured source-to-drain resistance. The indirect fitting is shown to be advantageous in terms of fewer number of iterations needed and wider extent of initial guess values range. (C) 2009 Elsevier Ltd. All rights reserved.
"Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction" (2009). Faculty Bibliography 2000s. 1969.