Title

Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

Authors

Authors

G. Ozgur; A. Demir;D. G. Deppe

Comments

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Abbreviated Journal Title

IEEE J. Quantum Electron.

Keywords

Characteristic temperature (T(0)); laser threshold; quantum-dot (QD); laser; semiconductor lasers; NEGATIVE CHARACTERISTIC TEMPERATURE; DENSITY-OF-STATES; MODULATION; RESPONSE; INJECTION-LASER; ACTIVE-REGION; HIGH-SPEED; RECOMBINATION; EMISSION; PERFORMANCE; DYNAMICS; Engineering, Electrical & Electronic; Optics; Physics, Applied

Abstract

A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous broadening and p-doping influence the QD laser's temperature dependence of threshold T(0). The analysis includes the additional parameters of homogeneous broadening, quantum state populations, and threshold gain. The results show that while the source of negative T(0) can occur due to different effects, the transparency current plays a critical role in both undoped and p-doped QD lasers. Experimental trends of negative T(0) and their dependence on p-doping are replicated in the calculated results. Inhomogeneous broadening is found to play a lesser role to the transparency current in setting T(0). Homogeneous broadening is most important for uniform QDs with thermally isolated ground-state transitions.

Journal Title

Ieee Journal of Quantum Electronics

Volume

45

Issue/Number

10

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

1265

Last Page

1272

WOS Identifier

WOS:000270215400002

ISSN

0018-9197

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