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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

Annealing; Doping Profiles; Erbium; Photoluminescence; Silicon; Compounds; Thin Films; Silicon; Absorption; Glasses; Light; Physics; Applied

Abstract

Time-dependent photoluminescence measurements of low-temperature-annealed Er-doped Si-rich SiO2 were conducted at sample temperatures 15-300 K. The erbium internal relaxation efficiency from the second (I-4(11/2)) to the first (I-4(13/2)) excited state upon luminescence-center-mediated Er3+ excitation is investigated. Despite the observation of temperature-dependent relaxation rates, the erbium internal relaxation efficiency is found to be remarkably temperature independent, which suggests that the internal relaxation efficiency is near unity. Internal relaxation is shown to account for 50%-55% of the I-4(13/2) excitation events in the entire temperature range. These results demonstrate that high pump efficiency and stable operation of devices based on this material will be possible under varying thermal conditions.

Journal Title

Applied Physics Letters

Volume

94

Issue/Number

24

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000267166600015

ISSN

0003-6951

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