Title

Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films

Authors

Authors

O. Savchyn; R. M. Todi; K. R. Coffey; L. K. Ono; B. R. Cuenya;P. G. Kik

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

SILICON; NANOCRYSTALS; LIGHT; Physics, Applied

Abstract

Erbium sensitization is observed in as-deposited Er3+ doped Si-rich SiO2, ruling out the involvement of Si nanocrystals in the Er3+ excitation in these samples. The Er3+ excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 degrees C under 355 and 532 nm excitation. The density of sensitized Er3+ ions is shown to be excitation wavelength independent, while the shape of the Er3+ excitation spectra is governed by a wavelength dependent Er3+ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3272271]

Journal Title

Applied Physics Letters

Volume

95

Issue/Number

23

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000272627700009

ISSN

0003-6951

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