Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films
Abbreviated Journal Title
Appl. Phys. Lett.
SILICON; NANOCRYSTALS; LIGHT; Physics, Applied
Erbium sensitization is observed in as-deposited Er3+ doped Si-rich SiO2, ruling out the involvement of Si nanocrystals in the Er3+ excitation in these samples. The Er3+ excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 degrees C under 355 and 532 nm excitation. The density of sensitized Er3+ ions is shown to be excitation wavelength independent, while the shape of the Er3+ excitation spectra is governed by a wavelength dependent Er3+ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3272271]
Applied Physics Letters
"Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films" (2009). Faculty Bibliography 2000s. 2095.