Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor
Abbreviated Journal Title
J. Appl. Phys.
FIELD-EFFECT TRANSISTORS; TERAHERTZ RADIATION; EFFECTIVE-MASS; HETEROSTRUCTURES; Physics, Applied
Voltage-tunable plasmon resonances in the two-dimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 mu m period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of terahertz radiation was observed in transmission in the frequency range of 10-50 cm(-1). The resonance frequency depends on the gate-tuned sheet charge density of the 2DEG. The observed separation of resonance fundamental from its harmonics and their shift with gate bias are compared with theory. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3129319]
Journal of Applied Physics
"Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor" (2009). Faculty Bibliography 2000s. 2096.