Title

Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

Authors

Authors

H. Saxena; R. E. Peale;W. R. Buchwald

Abbreviated Journal Title

J. Appl. Phys.

Keywords

FIELD-EFFECT TRANSISTORS; TERAHERTZ RADIATION; EFFECTIVE-MASS; HETEROSTRUCTURES; Physics, Applied

Abstract

Voltage-tunable plasmon resonances in the two-dimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 mu m period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of terahertz radiation was observed in transmission in the frequency range of 10-50 cm(-1). The resonance frequency depends on the gate-tuned sheet charge density of the 2DEG. The observed separation of resonance fundamental from its harmonics and their shift with gate bias are compared with theory. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3129319]

Journal Title

Journal of Applied Physics

Volume

105

Issue/Number

11

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

6

WOS Identifier

WOS:000267053200001

ISSN

0021-8979

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