Title

Electron beam induced current profiling of ZnO p-n homojunctions

Authors

Authors

L. Chernyak; C. Schwarz; E. S. Flitsiyan; S. Chu; J. L. Liu;K. Gartsman

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

LIGHT-EMITTING-DIODES; HETEROJUNCTION; FABRICATION; Physics, Applied

Abstract

Variable temperature electron beam induced current technique was employed for the profiling of ZnO p-n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p-type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of similar to 145 meV. The latter parameter likely represents carrier delocalization energy and determines the increase of the diffusion length due to the reduction in recombination efficiency. (c) 2008 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

92

Issue/Number

10

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000253989300068

ISSN

0003-6951

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