Electron beam induced current profiling of ZnO p-n homojunctions
Abbreviated Journal Title
Appl. Phys. Lett.
LIGHT-EMITTING-DIODES; HETEROJUNCTION; FABRICATION; Physics, Applied
Variable temperature electron beam induced current technique was employed for the profiling of ZnO p-n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p-type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of similar to 145 meV. The latter parameter likely represents carrier delocalization energy and determines the increase of the diffusion length due to the reduction in recombination efficiency. (c) 2008 American Institute of Physics.
Applied Physics Letters
"Electron beam induced current profiling of ZnO p-n homojunctions" (2008). Faculty Bibliography 2000s. 217.