Morphology Instability of Silicon Nitride Nanowires
Abbreviated Journal Title
J. Phys. Chem. C
INDIUM-PHOSPHIDE NANOWIRES; BUILDING-BLOCKS; NANOBELTS; SHAPE; PHOTOLUMINESCENCE; BETA-SI3N4; PYROLYSIS; CRYSTALS; DEVICES; SENSORS; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, ; Multidisciplinary
We report that cylinder-shaped Si(3)N(4) nanowires are not stable and can gradually transform into nanobelts via surface diffusion during high-temperature annealing. We demonstrate that such instability is driven by the requirements for reducing overall surface energy. The resultant nanobelts have the same width-to-thickness ratio, suggesting a stable morphology. A model in terms of surface energy is proposed to explain the formation of such stable morphology, which agrees well with experimental results. Our result suggests that instability could be a limiting factor for high-temperature applications of ID nanostructures.
Journal of Physical Chemistry C
"Morphology Instability of Silicon Nitride Nanowires" (2009). Faculty Bibliography 2000s. 2283.