Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
THIN-FILMS; MINORITY; Physics, Applied
Abstract
The diffusion length, L, of electrons in Mg-doped p-GaN grown by metal-organic chemical vapor deposition was found to increase linearly from 0.55 to 2.0 mu m during 1500 s of electron beam irradiation. Similar trends were observed for p-type Mg-doped GaN and AlGaN/GaN superlattices grown by molecular-beam epitaxy. While the electron diffusion length in p-(Al)GaN depends on irradiation time, the diffusion length of holes in n-GaN remains unchanged, with L similar to 0.35 mu m. We attribute the observed diffusion length change in p-(Al)GaN to an increase in the minority carrier lifetime. This increase is likely due to electron beam-induced charging of the deep metastable centers associated with Mg doping. The concentration of these centers was estimated to be similar to 10(18) cm(-3). The minority carrier diffusion length increase in p-(Al)GaN, which occurs during electron injection, may lead to self-improvement of the bipolar transistor characteristics.
Journal Title
Applied Physics Letters
Volume
77
Issue/Number
6
Publication Date
1-1-2000
Document Type
Article
DOI Link
Language
English
First Page
875
Last Page
877
WOS Identifier
ISSN
0003-6951
Recommended Citation
Chernyak, Leonid; Osinsky, Andrei; Fflyigin, Vladimir; and Schubert, E. F., "Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices" (2000). Faculty Bibliography 2000s. 2465.
https://stars.library.ucf.edu/facultybib2000/2465
Comments
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