Title

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

Authors

Authors

L. Chernyak; A. Osinsky; V. Fuflyigin;E. F. Schubert

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

THIN-FILMS; MINORITY; Physics, Applied

Abstract

The diffusion length, L, of electrons in Mg-doped p-GaN grown by metal-organic chemical vapor deposition was found to increase linearly from 0.55 to 2.0 mu m during 1500 s of electron beam irradiation. Similar trends were observed for p-type Mg-doped GaN and AlGaN/GaN superlattices grown by molecular-beam epitaxy. While the electron diffusion length in p-(Al)GaN depends on irradiation time, the diffusion length of holes in n-GaN remains unchanged, with L similar to 0.35 mu m. We attribute the observed diffusion length change in p-(Al)GaN to an increase in the minority carrier lifetime. This increase is likely due to electron beam-induced charging of the deep metastable centers associated with Mg doping. The concentration of these centers was estimated to be similar to 10(18) cm(-3). The minority carrier diffusion length increase in p-(Al)GaN, which occurs during electron injection, may lead to self-improvement of the bipolar transistor characteristics. (C) 2000 American Institute of Physics. [S0003-6951(00)03532-4].

Journal Title

Applied Physics Letters

Volume

77

Issue/Number

6

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

875

Last Page

877

WOS Identifier

WOS:000088787300037

ISSN

0003-6951

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