Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
Abbreviated Journal Title
Appl. Phys. Lett.
THIN-FILMS; MINORITY; Physics, Applied
The diffusion length, L, of electrons in Mg-doped p-GaN grown by metal-organic chemical vapor deposition was found to increase linearly from 0.55 to 2.0 mu m during 1500 s of electron beam irradiation. Similar trends were observed for p-type Mg-doped GaN and AlGaN/GaN superlattices grown by molecular-beam epitaxy. While the electron diffusion length in p-(Al)GaN depends on irradiation time, the diffusion length of holes in n-GaN remains unchanged, with L similar to 0.35 mu m. We attribute the observed diffusion length change in p-(Al)GaN to an increase in the minority carrier lifetime. This increase is likely due to electron beam-induced charging of the deep metastable centers associated with Mg doping. The concentration of these centers was estimated to be similar to 10(18) cm(-3). The minority carrier diffusion length increase in p-(Al)GaN, which occurs during electron injection, may lead to self-improvement of the bipolar transistor characteristics. (C) 2000 American Institute of Physics. [S0003-6951(00)03532-4].
Applied Physics Letters
"Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices" (2000). Faculty Bibliography 2000s. 2465.