Conduction-band deformation effect on stress-induced leakage current
Abbreviated Journal Title
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
An improved model of the stress-induced leakage current including effect of the inelastic trap-assisted tunneling is proposed. The present model accounts for the conduction band deformation effect. The simulation results reveal that the conduction-band deformation effect cannot be neglected when trapped charge density is larger than 10(12) cm(-2). The model predictions are in good agreement with the experimental data. (C) 2000 Elsevier Science Ltd. All rights reserved.
"Conduction-band deformation effect on stress-induced leakage current" (2000). Faculty Bibliography 2000s. 2508.