Title

Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration

Authors

Authors

L. Chernyak;M. Klimov

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

SCANNING PROBE MICROSCOPY; ELECTRIC-FIELD; DEVICE CREATION; ION; MOBILITY; SEMICONDUCTORS; TEMPERATURE; CUINSE2; BEHAVIOR; SI; LI; Physics, Applied

Abstract

An external electric field (up to 10(6) V/cm) was used for nanoscale p-n junction fabrication in Si doped with Li (Si:Li) in situ in a scanning probe microscope. Creation of nano-p-n junctions was ascribed to the thermally assisted electromigration of Li+ ions. Tunneling I-V spectroscopy provided evidence for a conversion of the electrical conductivity type from p to n. A local temperature increase during an electric field-induced p-n junction fabrication was estimated to be up to 160 degreesC. (C) 2001 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

78

Issue/Number

11

Publication Date

1-1-2001

Document Type

Article

Language

English

First Page

1613

Last Page

1615

WOS Identifier

WOS:000167364700051

ISSN

0003-6951

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