Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration
Abbreviated Journal Title
Appl. Phys. Lett.
SCANNING PROBE MICROSCOPY; ELECTRIC-FIELD; DEVICE CREATION; ION; MOBILITY; SEMICONDUCTORS; TEMPERATURE; CUINSE2; BEHAVIOR; SI; LI; Physics, Applied
An external electric field (up to 10(6) V/cm) was used for nanoscale p-n junction fabrication in Si doped with Li (Si:Li) in situ in a scanning probe microscope. Creation of nano-p-n junctions was ascribed to the thermally assisted electromigration of Li+ ions. Tunneling I-V spectroscopy provided evidence for a conversion of the electrical conductivity type from p to n. A local temperature increase during an electric field-induced p-n junction fabrication was estimated to be up to 160 degreesC. (C) 2001 American Institute of Physics.
Applied Physics Letters
"Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration" (2001). Faculty Bibliography 2000s. 2533.