Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices
Abbreviated Journal Title
IEEE Trans. Electron Devices
electron microscopy; semiconductor materials; superlattices; CARRIER DIFFUSION-LENGTH; SURFACE RECOMBINATION VELOCITY; BEAM-INDUCED; CURRENT; GAN; DEVICES; ENHANCEMENT; LIFETIME; FIELD; Engineering, Electrical & Electronic; Physics, Applied
The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type AlxGa1-xN/GaN superlattices with aluminum content x = 0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the electron beam induced current (EBIC) technique. A large anisotropy in the transport properties was observed with the effect varying from 1 : 3 to 1 : 6. We attribute an experimentally observed diffusion length anisotropy to minority electron scattering during transport across the potential barriers of the superlattice. Reference p-GaN samples were also investigated, and the diffusion length was observed to be isotropic in both metal organic chemical vapor deposition (MOCVD) (L = 0.5 mum) and MBE (L = 0.27 mum) grown samples.
Ieee Transactions on Electron Devices
"Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices" (2001). Faculty Bibliography 2000s. 2535.