Title

Phototransistor measurements in AlGaN/GaN HBTs

Authors

Authors

L. Chernyak; A. Osinsky; S. J. Pearton;F. Ren

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Electron. Lett.

Keywords

DEVICE CREATION; TEMPERATURE; SI; LI; Engineering, Electrical & Electronic

Abstract

A fast and reliable method for evaluation of transistor gain in npn AlGaN/GaN heterojunction bipolar transistors is demonstrated. The method is based on phototransistor measurements. which are carried out in situ in a scanning electron microscope. Electron beam current was used in these measurements as an analogue of current in the base, which remained floating. The obtained common-emitter DC current gain, beta, is similar to2.5, This value is in good agreement with the values of beta obtained from the conventional three-terminal measurements.

Journal Title

Electronics Letters

Volume

37

Issue/Number

23

Publication Date

1-1-2001

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/el:20010948

Language

English

First Page

1411

Last Page

1412

WOS Identifier

WOS:000172373300028

ISSN

0013-5194

Recommended Citation

"Phototransistor measurements in AlGaN/GaN HBTs" (2001). Faculty Bibliography 2000s. 2536.
https://stars.library.ucf.edu/facultybib2000/2536