Title
Minority carrier transport in GaN and related materials
Abbreviated Journal Title
Solid-State Electron.
Keywords
BEAM-INDUCED CURRENT; VAPOR-PHASE EPITAXY; SCANNING ELECTRON-MICROSCOPE; DIFFUSION-LENGTH; SPATIAL-DISTRIBUTION; FILMS; CATHODOLUMINESCENCE; RECOMBINATION; DISLOCATIONS; LAYERS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
Minority carrier transport properties are an indicator of AlGaN quality. This characteristic is particularly of significant importance for AlGaN-based bipolar devices. The goal of this review is to discuss different factors - temperature, doping level, dislocation density, electron current density - which affect minority carrier mobility, lifetime, and diffusion length, and to relate the changes in AlGaN transport properties to the functionality of electronic and optoelectronic devices. (C) 2001 Elsevier Science Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
45
Issue/Number
9
Publication Date
1-1-2001
Document Type
Review
Language
English
First Page
1687
Last Page
1702
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Minority carrier transport in GaN and related materials" (2001). Faculty Bibliography 2000s. 2537.
https://stars.library.ucf.edu/facultybib2000/2537
Comments
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