Title
Empirical reliability modeling for 0.18-mu m MOS devices
Abbreviated Journal Title
Solid-State Electron.
Keywords
MOSFET; time-dependent degradation law; reliability; lifetime prediction; DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
This paper presents a simple yet effective approach to modeling empirically the 0.18-mum MOS reliability. Short-term stress data are first measured, and the well-known power law is used to project the MOS long-term degradation and lifetime. These results are then used as the basis for the development of an empirical model to predict the MOS lifetime as a function of drain voltage and channel length. Our study focuses on the worst-case stress condition, and both the linear and saturation operations are considered in the modeling. Very good agreement between the measurements and model calculations has been demonstrated. (C) 2003 Elsevier Science Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
47
Issue/Number
9
Publication Date
1-1-2003
Document Type
Article
Language
English
First Page
1515
Last Page
1522
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Empirical reliability modeling for 0.18-mu m MOS devices" (2003). Faculty Bibliography 2000s. 2553.
https://stars.library.ucf.edu/facultybib2000/2553