A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices
Abbreviated Journal Title
Microw. Opt. Technol. Lett.
molecular beam epitaxy (MBE); low-temperature (LT)-grown GaAs and; Al0.3Ga0.7As; MISFETs; quasianalytical model; ELECTRON-DRIFT VELOCITY; LOW-TEMPERATURE; FIELD; INSULATOR; VOLTAGE; MESFETS; LAYERS; Engineering, Electrical & Electronic; Optics
This paper describes a quasianalytical model for the calculation of the current-voltage characteristics of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the cull ent continuity equation, and the Chang-Fetterman velocity-field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one-dimensional Poisson equation is considered. When the devices are in the saturation regime, the two-dimensional Poisson equation is solved analytically. The resulting output current-voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs. (C) 2000 John Wiley & Sons, Inc.
Microwave and Optical Technology Letters
"A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices" (2000). Faculty Bibliography 2000s. 2757.