New simple procedure to determine the threshold voltage of MOSFETs
Abbreviated Journal Title
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-strong inversion transition region of MOSFETs. It uses an auxiliary operator that involves integration of the drain current as a function of gate voltage. Tests show that the procedure produces results comparable to conventional methods. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.
"New simple procedure to determine the threshold voltage of MOSFETs" (2000). Faculty Bibliography 2000s. 2784.