Title

Validation of bulk-charge effect parameter extraction in MOSFETs

Authors

Authors

F. J. G. Sanchez; A. Ortiz-Conde; J. A. Salcedo; J. Muci; M. Estrada; A. Cerdeira; J. J. Liou;Y. Yue

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

CHANNEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of operation, (C) 2000 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

40

Issue/Number

6

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

941

Last Page

945

WOS Identifier

WOS:000087640800005

ISSN

0026-2714

Recommended Citation

"Validation of bulk-charge effect parameter extraction in MOSFETs" (2000). Faculty Bibliography 2000s. 2785.
https://stars.library.ucf.edu/facultybib2000/2785