Validation of bulk-charge effect parameter extraction in MOSFETs
Abbreviated Journal Title
CHANNEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of operation, (C) 2000 Elsevier Science Ltd. All rights reserved.
"Validation of bulk-charge effect parameter extraction in MOSFETs" (2000). Faculty Bibliography 2000s. 2785.