Title

Interface structures in GaAs wafer bonding: Application to compliant substrates

Authors

Authors

R. R. Vanfleet; M. Shverdin; J. Silcox; Z. H. Zhu;Y. H. Lo

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

GALLIUM-ARSENIDE; CRYSTALS; GROWTH; Physics, Applied

Abstract

The interface of direct bonded GaAs to GaAs has been studied by scanning transmission electron microscopy and electron energy loss spectroscopy. Voids are seen along the boundary with most being partially filled with a gallium particle. Two general sizes of voids are seen. The large voids (d similar to 45 nm) are distributed in an approximately linear relationship and the smaller (d similar to 12 nm) randomly. In compliant substrates, one of the layers is made thin (less than or equal to 10 nm) and twisted similar to 45 degrees. The larger voids often extend past this thin compliant layer, but no evidence of granularity of the epitaxial film is observed. (C) 2000 American Institute of Physics. [S0003-6951(00)00119-4].

Journal Title

Applied Physics Letters

Volume

76

Issue/Number

19

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

2674

Last Page

2676

WOS Identifier

WOS:000086778200010

ISSN

0003-6951

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