Title
The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films
Abbreviated Journal Title
Appl. Surf. Sci.
Keywords
silicon carbide; sputtering; XPS; AFM; SILICON-CARBIDE; THIN-FILMS; SPECTROSCOPY; SURFACE; Chemistry, Physical; Materials Science, Coatings & Films; Physics, ; Applied; Physics, Condensed Matter
Abstract
Thin films of silicon carbide nitride (SiCxNy) were deposited in an r.f. magnetron sputtering system using a SiC target. Films of different compositions were deposited by varying the ratios of argon and nitrogen in the sputtering ambient. X-ray photoelectron spectroscopy and atomic force microscopy studies on the deposited films indicated that the chemical states as well as the surface roughness are highly sensitive to the nitrogen ratios during sputtering. (C) 2001 Elsevier Science B.V. All rights reserved.
Journal Title
Applied Surface Science
Volume
183
Issue/Number
3-4
Publication Date
1-1-2001
Document Type
Article
Language
English
First Page
270
Last Page
277
WOS Identifier
ISSN
0169-4332
Recommended Citation
"The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films" (2001). Faculty Bibliography 2000s. 2908.
https://stars.library.ucf.edu/facultybib2000/2908