Title

Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation

Authors

Authors

Y. Tan; J. J. Liou; J. Gessner;F. Schwierz

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

reliability analysis; heterojunction bipolar transistor; device; simulation; DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensional device simulation. The main objective is to identify the types and locations of defects in the HBT which are responsible for different base current instabilities observed experimentally in post-stress HBTs. Pre- and post-stress measurement data reported in the literature are included to demonstrate the usefulness of the analysis. (C) 2001 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

45

Issue/Number

5

Publication Date

1-1-2001

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(01)00090-9

Language

English

First Page

727

Last Page

734

WOS Identifier

WOS:000169397100016

ISSN

0038-1101

Recommended Citation

"Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation" (2001). Faculty Bibliography 2000s. 2973.
https://stars.library.ucf.edu/facultybib2000/2973