Title
Copper electromigration modeling including barrier layer effect
Abbreviated Journal Title
Solid-State Electron.
Keywords
copper electromigration; barrier layer effect; pulse-DC stress; interconnect lifetime; continuity equation; reduced vacancy; concentration; THIN-FILMS; RELIABILITY; FAILURE; STRESS; MICROSTRUCTURE; INTERCONNECTS; CONDUCTOR; DIFFUSION; BOUNDARY; DC; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is analyzed numerically. The barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under the DC stress is higher than that under the pulsed DC stress. The lifetime model predictions are also compared with experimental data. Good agreement between the model predictions and experiments is obtained. (C) 2001 Elsevier Science Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
45
Issue/Number
12
Publication Date
1-1-2001
Document Type
Article
Language
English
First Page
2011
Last Page
2016
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Copper electromigration modeling including barrier layer effect" (2001). Faculty Bibliography 2000s. 3008.
https://stars.library.ucf.edu/facultybib2000/3008
Comments
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