Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors
Abbreviated Journal Title
OXIDE THICKNESS; NM; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Effects of direct tunneling and surface roughness on the capacitance-voltage characteristics of ultra-thin gate deep submicron MOS transistors have been studied. An improved equivalent circuit model to account for surface roughness and direct tunneling on the ultra-thin gate MOS capacitors in a unified manner is proposed. The capacitance subject to direct tunneling and surface roughness effect is smaller than that without surface roughness effect. (C) 2001 Elsevier Science Ltd. All rights reserved.
"Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors" (2001). Faculty Bibliography 2000s. 3017.