Study of temperature dependence for the electron injection-induced effects in GaN
Abbreviated Journal Title
Appl. Phys. Lett.
MINORITY-CARRIER TRANSPORT; DIFFUSION LENGTH; FILMS; Physics, Applied
Electron-beam injection-induced increase of minority carrier diffusion length in p-type GaN was studied as a function of sample temperature ranging from 25 degreesC to 130 degreesC. It was found that the rate for diffusion length increase exponentially decays with increasing temperature. This decay was attributed to a temperature-activated release of electron-beam injected electrons trapped on Mg levels. The activation energy of these levels was found to be similar to178 meV. This is in good agreement with the previously reported position for Mg levels in the GaN band gap. (C) 2002 American Institute of Physics.
Applied Physics Letters
"Study of temperature dependence for the electron injection-induced effects in GaN" (2002). Faculty Bibliography 2000s. 3121.