Title

Study of temperature dependence for the electron injection-induced effects in GaN

Authors

Authors

L. Chernyak; W. Burdett;A. Osinsky

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

MINORITY-CARRIER TRANSPORT; DIFFUSION LENGTH; FILMS; Physics, Applied

Abstract

Electron-beam injection-induced increase of minority carrier diffusion length in p-type GaN was studied as a function of sample temperature ranging from 25 degreesC to 130 degreesC. It was found that the rate for diffusion length increase exponentially decays with increasing temperature. This decay was attributed to a temperature-activated release of electron-beam injected electrons trapped on Mg levels. The activation energy of these levels was found to be similar to178 meV. This is in good agreement with the previously reported position for Mg levels in the GaN band gap. (C) 2002 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

81

Issue/Number

9

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

1633

Last Page

1635

WOS Identifier

WOS:000177549200031

ISSN

0003-6951

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