Title

Influence of electron injection on performance of GaN photodetectors

Authors

Authors

L. Chernyak; A. Schulte; A. Osinsky; J. Graff;E. F. Schubert

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

P-I-N; DIFFUSION LENGTH; Physics, Applied

Abstract

It is demonstrated that short-time (up to 1200 s) electron injection into the p-region of GaN p-n junction, as a result of forward bias application, leads to a long-term multifold enhancement of the device peak responsivity as well as to a spectral broadening of the photoresponse. The effect is found to persist for several days and is related to an increased minority carrier diffusion length in the p region, due to an injected electron trapping on deep levels associated with Mg acceptors. (C) 2002 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

80

Issue/Number

6

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

926

Last Page

928

WOS Identifier

WOS:000173612900008

ISSN

0003-6951

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