Influence of electron injection on performance of GaN photodetectors
Abbreviated Journal Title
Appl. Phys. Lett.
P-I-N; DIFFUSION LENGTH; Physics, Applied
It is demonstrated that short-time (up to 1200 s) electron injection into the p-region of GaN p-n junction, as a result of forward bias application, leads to a long-term multifold enhancement of the device peak responsivity as well as to a spectral broadening of the photoresponse. The effect is found to persist for several days and is related to an increased minority carrier diffusion length in the p region, due to an injected electron trapping on deep levels associated with Mg acceptors. (C) 2002 American Institute of Physics.
Applied Physics Letters
"Influence of electron injection on performance of GaN photodetectors" (2002). Faculty Bibliography 2000s. 3122.