Title

Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs

Authors

Authors

J. J. Liou; R. Shireen; A. Ortiz-Conde; F. J. G. Sanchez; A. Cerdeira; X. Gao; X. C. Zou;C. S. Ho

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

IV CHARACTERISTICS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the subthreshold behavior based on results obtained from two-dimensional device simulation. An empirical expression is also suggested to describe the subthreshold current including the depletion effect. (C) 2002 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

42

Issue/Number

3

Publication Date

1-1-2002

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0026-2714(01)00259-1

Language

English

First Page

343

Last Page

347

WOS Identifier

WOS:000175318700005

ISSN

0026-2714

Recommended Citation

"Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs" (2002). Faculty Bibliography 2000s. 3323.
https://stars.library.ucf.edu/facultybib2000/3323