Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
GALLIUM NITRIDE; SPECTROSCOPY; SCATTERING; STRAIN; GROWTH; Physics, Applied
Abstract
Spatially resolved Raman spectra were measured on thick GaN samples with known dislocation density grown by hydride vapor phase epitaxy. The frequencies of the E-2 (high) and E-1 (transverse optical) phonons shift to lower wave number over a distance of 30 mum from the sapphire substrate/GaN interface. The shifts are linearly correlated with the dislocation density suggesting that the strain due to the lattice mismatch at the interface determines both quantities.
Journal Title
Applied Physics Letters
Volume
80
Issue/Number
8
Publication Date
1-1-2002
Document Type
Article
DOI Link
Language
English
First Page
1355
Last Page
1357
WOS Identifier
ISSN
0003-6951
Recommended Citation
Nootz, G.; Schulte, A.; Chernyak, L.; Osinky, A.; Jasinski, J.; Benamara, M.; and Liliental-Weber, Z., "Correlations between spatially resolved Raman shifts and dislocation density in GaN films" (2002). Faculty Bibliography 2000s. 3383.
https://stars.library.ucf.edu/facultybib2000/3383
Comments
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