Title

Correlations between spatially resolved Raman shifts and dislocation density in GaN films

Authors

Authors

G. Nootz; A. Schulte; L. Chernyak; A. Osinsky; J. Jasinski; M. Benamara;Z. Liliental-Weber

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

GALLIUM NITRIDE; SPECTROSCOPY; SCATTERING; STRAIN; GROWTH; Physics, Applied

Abstract

Spatially resolved Raman spectra were measured on thick GaN samples with known dislocation density grown by hydride vapor phase epitaxy. The frequencies of the E-2 (high) and E-1 (transverse optical) phonons shift to lower wave number over a distance of 30 mum from the sapphire substrate/GaN interface. The shifts are linearly correlated with the dislocation density suggesting that the strain due to the lattice mismatch at the interface determines both quantities. (C) 2002 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

80

Issue/Number

8

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

1355

Last Page

1357

WOS Identifier

WOS:000174009800013

ISSN

0003-6951

Share

COinS