Laser doping of silicon carbide substrates
Abbreviated Journal Title
J. Electron. Mater.
laser doping; direct-write; silicon carbide; wide bandgap; semiconductor; IMPLANTATION; CONTACTS; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied
A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.
Journal of Electronic Materials
"Laser doping of silicon carbide substrates" (2002). Faculty Bibliography 2000s. 3443.