Title

Laser doping of silicon carbide substrates

Authors

Authors

I. A. Salama; N. R. Quick;A. Kar

Abbreviated Journal Title

J. Electron. Mater.

Keywords

laser doping; direct-write; silicon carbide; wide bandgap; semiconductor; IMPLANTATION; CONTACTS; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

Abstract

A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.

Journal Title

Journal of Electronic Materials

Volume

31

Issue/Number

3

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

200

Last Page

208

WOS Identifier

WOS:000174370400006

ISSN

0361-5235

Share

COinS