The optical signature of electron injection in p-(Al)GaN
Abbreviated Journal Title
III nitrides; GaN; electron injection; cathodoluminescence; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; ALGAN/GAN SUPERLATTICES; MG; Physics, Condensed Matter
Electron injection into p-type (Al)GaN leads to a considerable (several-fold) decrease of the cathodoluminescence intensity at room and elevated temperatures. Cathodoluminescence measurements revealed a slower intensity decrease with increasing sample temperature and allowed an estimate of the activation energy for the effect to be obtained (192-232 meV), which is consistent with the values for Mg-acceptor thermal ionization in (Al)GaN. The electron injection-induced decay of the sample's luminescence which persists for at least several days at similar to300 K is, therefore, attributed to an injected electron trapping on a Mg level in the (Al)GaN forbidden gap. (C) 2004 Elsevier Ltd. All rights reserved.
Superlattices and Microstructures
"The optical signature of electron injection in p-(Al)GaN" (2003). Faculty Bibliography 2000s. 3645.