Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
MINORITY-CARRIER TRANSPORT; P-TYPE GAN; ALGAN/GAN SUPERLATTICES; BEAM; PHOTODETECTORS; STATES; Physics, Applied
Abstract
Local irradiation of p-type GaN with the electron beam of a scanning electron microscope resulted in up to a threefold decrease of the peak cathodoluminescence intensity at similar to379 nm, as was observed in the variable temperature measurements. The cathodoluminescence results are consistent with an increase of the minority carrier diffusion length in the material, as is evident from the electron-beam-induced current measurements. The activation energy for the electron injection effect, estimated from the temperature-dependent cathodoluminescence, is in agreement with the thermal ionization energy of the Mg-acceptor in GaN.
Journal Title
Applied Physics Letters
Volume
847
Issue/Number
21
Publication Date
1-1-2003
Document Type
Article
DOI Link
Language
English
First Page
3680
Last Page
3682
WOS Identifier
ISSN
0003-6951
Recommended Citation
Chernyak, Leonid; Burdett, William; Klimov, Mikhail; and Osinky, Andrei, "Cathodoluminescence studies of the electron injection-induced effects in GaN" (2003). Faculty Bibliography 2000s. 3671.
https://stars.library.ucf.edu/facultybib2000/3671
Comments
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